Cite
HARVARD Citation
Kamiyama, E. et al. (2016). Impact of Anisotropic Thermal Stress on Behavior of Grown-In Defects during Si Crystal Growth from a Melt. ECS journal of solid state science and technology. pp. P553-P555. [Online].
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Kamiyama, E. et al. (2016). Impact of Anisotropic Thermal Stress on Behavior of Grown-In Defects during Si Crystal Growth from a Melt. ECS journal of solid state science and technology. pp. P553-P555. [Online].