Cite
HARVARD Citation
Wu, Q. et al. (2017). Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model. ECS journal of solid state science and technology. pp. Q171-Q178. [Online].
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Wu, Q. et al. (2017). Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model. ECS journal of solid state science and technology. pp. Q171-Q178. [Online].