Interconnects and Interposer in Porous Anodic Aluminum Oxide: The Fabrication Technology and Process Integration. (1st January 2018)

• Record Type: Journal Article
• Authors: Chan, Hsiang-Yu; Bachman, Mark; Li, Guann-Pyng
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 8(2018)
• Page Start: P385
• Page End: P390
• Publication Date: 2018-01-01
• Subjects: Anodic aluminum oxide -- electroplating -- Vias; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0121808jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Porous anodic aluminum oxide (AAO) features its interesting nanoporous structure which is capable of being used as a template for nanopatterning, highly anisotropic nanowire fabrication, and MEMs devices fabrication. In this work, AAO was demonstrated to be an interposer substrate for 2.5/3D packaging technology in microelectronics exploiting the unique etching characteristic of nanopores. Not only the high density vertical through via was fabricated but also metallized with Cu as void-less interconnect simply by using wet chemicals. Passive devices like inductors were embedded in AAO film after via metallization and re-distribution layer Cu electroplating which provide multifunctionalities to proposed AAO interposer. AAO with the special structural and etching properties plus its low electrical loss, thermal stability, and mechanical robustness, is a promising material for heterogeneous integration and advanced microelectronic packaging technology.