Cite
HARVARD Citation
Chen, Y. et al. (2016). Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices. ECS transactions. pp. 25-33. [Online].
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Chen, Y. et al. (2016). Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices. ECS transactions. pp. 25-33. [Online].