Cite
HARVARD Citation
Lin, T. et al. (2019). Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. ECS journal of solid state science and technology. pp. P388-P391. [Online].
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Lin, T. et al. (2019). Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. ECS journal of solid state science and technology. pp. P388-P391. [Online].