Communication—Direct Imaging of Irradiation Damage in Semiconductors by Low-Energy SEM. (1st January 2017)

• Record Type: Journal Article
• Authors: Jóźwik, Iwona; Dąbrowska, Elżbieta; Maląg, Andrzej; Barcz, Adam
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 7(2017)
• Page Start: P415
• Page End: P417
• Publication Date: 2017-01-01
• Subjects: irradiation damage -- low-kV scanning electron microscopy -- semiconductors; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0191707jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The performance of the present-day Scanning Electron Microscopy (SEM) extends far beyond delivering electronic images of the surface topography. One of the most noticeable achievements of the technique was recognition of p- and n-type conductive channels on the semiconductor surface. Here, we report on the possibility of visualization of highly resistive layers produced by ion irradiation. The presented high-resolution imaging of damage-induced insulating layers was made possible through application of low energy of the primary beam (1 keV), optimization of the instrument parameters and effective separation of the so-called SE1 vs. SE2 secondary electrons.