Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30 Super-Lattice like Structure. (1st January 2015)

• Record Type: Journal Article
• Authors: Hongxin, Yang; Luping, Shi; Koon, Lee Hock; Rong, Zhao; Minghua, Li; Jianming, Li; Guan, Lim Kian; Chong, Chong Tow
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 12(2015)
• Page Start: N147
• Page End: N150
• Publication Date: 2015-01-01
• Subjects: Multi-level -- phase change memory -- super-lattice like; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0151512jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Lateral phase change memory (PCM) has attracted a lot of interest due to its simpler fabrication process and lower current. Researchers are trying to increase the storage capacity of lateral PCM. This paper proposed a novel super-lattice like (SLL) structure for lateral PCM to achieve multi-level storage. Lateral PCM with SLL structure incorporated with N-doped Sb70 Te30 and ZnS-SiO2 has been fabricated and tested. Both tested static I-V curve and dynamic pulse mode R-V curve show multi states existing in the device. Electrical and thermal simulations have been done for this device. Simulation results show that different resistance level can be found in this device with different states of phase change bridges. With increasing periods of SLL structure, more states can be achieved.