Communication—CMOS Thin-Film Transistors via Xe Flash-Lamp Crystallization of Patterned Amorphous Si. (1st January 2017)

• Record Type: Journal Article
• Authors: Mudgal, T.; Bhadrachalam, K.; Bischoff, P.; Cormier, D.; Manley, R. G.; Hirschman, K. D.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 12(2017)
• Page Start: Q179
• Page End: Q181
• Publication Date: 2017-01-01
• Subjects: Polycrystalline Silicon -- Thin-Film Transistors -- Xe Flash Lamp; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0021802jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Flash-lamp annealing (FLA) has been investigated for crystallization of patterned amorphous silicon (a-Si) in the fabrication of NMOS and PMOS Thin-Film Transistors (TFTs) on display glass. Samples were exposed with a xenon flash irradiance of ∼30 kW/cm 2 and pulse duration of 200 μs, with bolometer measurements showing an integrated energy of ∼6 J/cm 2 . Non-self-aligned TFTs fabricated from the resulting polycrystalline silicon demonstrated electron and hole channel mobility values in excess of 300 cm 2 /(Vs) and 100 cm 2 /(Vs), respectively. According to the authors' knowledge, this is the first report of CMOS TFTs demonstrated using the FLA technique.