Optical Absorption and Quantum Confinement in Porous Silicon Nanostructures Studied by Chemical Dissolution in HF Solutions and Photoconduction. (1st January 2017)

• Record Type: Journal Article
• Authors: Gelloz, B.; Ichimura, K.; Fuwa, H.; Kondoh, E.; Jin, L.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 1(2017)
• Page Start: R1
• Page End: R6
• Publication Date: 2017-01-01
• Subjects: absorption -- dissolution -- luminescence -- porous silicon -- quantum confinement; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0321612jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The progress of the chemical dissolution of porous silicon (PSi) formed from lightly-doped p-type silicon in ethanoic HF solutions was monitored by recording in situ the photocurrent from monochromatic illuminations, which was used as a measure of optical transmission. The relations between dissolution time, porosity, and absorption coefficient were established and the porosity-dependence of the absorption coefficient derived from ∼60% porosity to 100% porosity. The absorption results were discussed considering the Bruggeman model of effective medium approximation and other measurements from the literature, together with the effects of quantum confinement (QC) and surface states. The porosity and spectral dependences of the QC in the absorption spectra were clearly observed. QC in the blue spectral range (<500 nm) was found to require extremely high porosities (>85%), contrary to the red to green region, where QC was identified for the whole porosity range studied. Our procedure allows the continuous exploration of a wide range of porosities, without limitation on the high side, while preserving an ideal hydrogen-terminated PSi surface and very good structural integrity, as PSi is always kept in HF solution and never dried. The study also allows the determination of the dissolution rate of silicon in various HF-based solutions.