Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction. (1st January 2015)

• Record Type: Journal Article
• Authors: Jeong, Heejeong; Heo, Jinseong; Kyoung, Jisoo; Baik, Chan-Wook; Park, Seongjun; Hwang, Sung Woo; Lee, Chang-Won
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 12(2015)
• Page Start: N131
• Page End: N136
• Publication Date: 2015-01-01
• Subjects: Graphene -- heterojunction -- IGZO -- oxide -- photocurrent; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0071512jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The need for low-cost and highly versatile photosensing devices keeps increasing. In this work, we present a heterojunction device based on wafer-scale graphene grown by chemical vapor deposition (CVD) and sputtered InGaZnO (IGZO) semiconductor for dual mode photocurrent collection. The photocurrent can be collected either from the lateral gold/graphene/gold configuration or from the vertical graphene/IGZO/nickel heterojunction configuration with no external bias. Incident-energy-dependent photocurrent scanning microscopy shows that the dominant photocarriers are formed at the edge of the gold electrode through photo-thermoelectric hot hole generation in the lateral configuration. Vertical mode renders unidirectional current flow by photoexcited electrons in the IGZO and the subsequent relaxation and diffusion due to Fowler-Nordheim potential.