Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT. (1st January 2017)

• Record Type: Journal Article
• Authors: Jung, Hyun-Wook; Shin, Min Jeong; Chang, Sung-Jae; Ahn, Ho-Kyun; Do, Jae-Won; Cho, Kyu Jun; Won, Chul-Ho; Min, Byoung-Gue; Kim, Haecheon; Yoon, Hyung Sup; Lee, Jung-Hee; Lim, Jong-Won
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 4(2017)
• Page Start: P184
• Page End: P186
• Publication Date: 2017-01-01
• Subjects: Al2O3/AlGaN/GaN -- Hydrazine -- MIS-HEMT -- Surface treatement -- Threshold voltage instability; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0331704jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : This paper highlights N2 H4 treatment on AlGaN surface prior to Al2 O3 deposition for insulator/III-nitride interface quality improvement. AlGaN surface with and without N2 H4 treatment was systematically analyzed through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), which show an effective removal of the native oxide and improved roughness on AlGaN surface. In order to investigate the effects of N2 H4 treatment on the electrical properties of Al2 O3 /AlGaN/GaN MIS-HEMT, capacitance-voltage ( C(V) ) characteristics and transfer characteristics after gate bias stress were measured. Compared to the devices without N2 H4 treatment featuring a large hysteresis of 0.3 V and a high subthreshold slope (SS) = 119 mV/dec, N2 H4 -treated devices exhibit an almost negligible hysteresis of 50 mV and an improved SS of 105 mV/dec.