Cite
HARVARD Citation
Xiang, J. et al. (2015). Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET. ECS journal of solid state science and technology. pp. P441-P444. [Online].
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Xiang, J. et al. (2015). Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET. ECS journal of solid state science and technology. pp. P441-P444. [Online].