Annealing of Proton and Alpha Particle Damage in Au-W/β-Ga2O3 Rectifiers. (1st January 2019)

• Record Type: Journal Article
• Authors: Xian, Minghan; Fares, Chaker; Bae, Jinho; Kim, Jihyun; Ren, Fan; Pearton, S. J.
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 12(2019)
• Page Start: P799
• Page End: P804
• Publication Date: 2019-01-01
• Subjects: Microelectronics - Semiconductor Processing -- gallium oxide -- radiation damage; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0231912jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Vertical geometry Ga2 O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1–3 × 10 13 cm −2 or 10 MeV protons to fluences of 1–3 × 10 14 cm −2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm −1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2 O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.