Atomic Layer Deposition of Zirconium Dioxide from Zirconium Tetraiodide and Ozone. (1st January 2018)

• Record Type: Journal Article
• Authors: Kukli, Kaupo; Kemell, Marianna; Mizohata, Kenichiro; Vehkamäki, Marko; Kalam, Kristjan; Castán, Helena; Dueñas, Salvador; Link, Joosep; Stern, Raivo; Ritala, Mikko; Leskelä, Markku
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 2(2018)
• Page Start: P1
• Page End: P8
• Publication Date: 2018-01-01
• Subjects: atomic layer deposition -- magnetoelectrics -- zirconium oxide; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0041802jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : ZrO2 thin films were grown by atomic layer deposition using alternate surface reactions of ZrI4 and O3 precursors in the temperature range of 250–400°C to the thickness in the range of 5–100 nm. The films were dense, continuous, and consisted of mixed monoclinic and metastable polymorphs with significant contribution from cubic ZrO2 . The ZrO2 films possessed permittivity up to 19. The capacitor structures based on these films also demonstrated tendency to resistive switching behavior. The ZrO2 films exhibited saturative magnetization under external magnetic fields.