Cite
HARVARD Citation
Chen, Y. et al. (2019). Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes. ECS journal of solid state science and technology. pp. Q3229-Q3234. [Online].
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Chen, Y. et al. (2019). Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes. ECS journal of solid state science and technology. pp. Q3229-Q3234. [Online].