Nanoscale Etching: Dissolution of III-As and Ge in HCl/H2O2 Solutions. (11th September 2015)

• Record Type: Journal Article
• Authors: van Dorp, Dennis H.; Weinberger, David; Van Wonterghem, Simon; Arnauts, Sophia; Strubbe, Katrien; Holsteyns, Frank; De Gendt, Stefan
• Is Part Of: ECS transactions. Volume 69:Number 8(2015)
• Page Start: 235
• Page End: 242
• Publication Date: 2015-09-11
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06908.0235ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this work the etching kinetics of (100) III-As is studied at the nanoscale with ICP-MS for various HCl/H2 O2 mixtures. It is shown that the etch rate is controlled by both the concentration of the acid and the oxidizing agent. The surface termination during etching has strong impact on the etching kinetics. A similar effect was observed for Ge. The Ge (100) surface is sensitive to surface roughening during etching and reoxidation after native oxide removal.