Thermal Atomic Layer Deposition of TaAlC with TaCl5 and TMA as Precursors. (1st January 2016)

• Record Type: Journal Article
• Authors: Xiang, Jinjuan; Li, Tingting; Wang, Xiaolei; Du, Liyong; Ding, Yuqiang; Wang, Wenwu; Li, Junfeng; Zhao, Chao
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 10(2016)
• Page Start: P633
• Page End: P636
• Publication Date: 2016-01-01
• Subjects: atomic layer deposition -- FinFET -- metal gate -- TaAlC -- work function; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0261610jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Metal gate TaAlC film was grown by thermal atomic layer deposition (ALD) technique using tantalum pentachloride (TaCl5 ) and trimethylaluminum (TMA) as precursors. The effects of growth temperature on the physical and electrical characteristics were estimated by X-ray photoemission spectroscopy, X-ray reflectivity, Grazing incident X-ray diffraction and metal-oxide-semiconductor (MOS) capacitor structure, respectively. It was found that the growth rate increases with growth temperature while the resistivity decreases with growth temperature. All the TaAlC films show cubic microstructure. Superior electrical properties were obtained with TaAlC as gate electrode. The effective workfunction of TaAlC can be tunable from 4.49 eV to 4.74 eV by adjusting the growth temperature and the film thickness. The effective workfunction close to Si mid-gap is suitable for low power FinFET device application.