Communication—Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM. (1st January 2017)

• Record Type: Journal Article
• Authors: Sung, Changhyuck; Song, Jeonghwan; Woo, Jiyong; Hwang, Hyunsang
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 7(2017)
• Page Start: P440
• Page End: P442
• Publication Date: 2017-01-01
• Subjects: effective gate-to-source voltage (VGSeff) -- endurance -- HfO2 -- reset breakdown -- resistive random access memory (RRAM); Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0281707jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2 -based 1T1R RRAM device. The effective gate-to-source voltage VGS eff is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio.