Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers. Issue 9 (20th May 2020)

• Record Type: Journal Article
• Authors: Usman, Muhammad; Anwar, Abdur-Rehman; Munsif, Munaza; Malik, Shahzeb; Islam, Noor Ul; Jamil, Tariq
• Is Part Of: Journal of modern optics. Volume 67:Issue 9(2020)
• Page Start: 837
• Page End: 842
• Publication Date: 2020-05-20
• Subjects: InGaN -- light-emitting diodes -- efficiency -- green; Optics -- Periodicals; 535
• DOI: 10.1080/09500340.2020.1775906
• Languages: English
• ISSNs: 0950-0340

Abstract

Abstract : In this work, InGaN-based green light-emitting diodes (LEDs) are studied theoretically. We have minimized the problem of asymmetrical carrier distribution in the active region. We have sandwiched the active region between p-AlGaN layers and observed improvement in the device performance. The hole injection, as well as the distribution, is improved remarkably in all the QWs. The asymmetry between the concentrations of electrons and holes in the emission region is reduced in contrast to the conventional structure. The radiative recombination is also enhanced because all the QWs contribute greatly in radiative recombination.