Valence and Conduction Band Offsets in Sputtered LaAlO3/InGaZnO4 Heterostructures. (1st January 2016)

• Record Type: Journal Article
• Authors: Hays, David C.; Gila, B. P.; Pearton, S. J.; Ren, F.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 12(2016)
• Page Start: P680
• Page End: P684
• Publication Date: 2016-01-01
• Subjects: Band offset -- IGZO -- LAO; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0261612jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We report on the determination of band offsets in magnetron-sputtered LaAlO3 /InGaZnO4 (LAO/IGZO) heterostructures using X-ray Photoelectron Spectroscopy. The valence band offset was determined to be 0.33 eV ± 0.03 eV, while the conduction band offset was determined to be 2.91 ± 0.3 eV. The LaAlO3 /InGaZnO4 system has a nested, or straddling, gap (type I) alignment and would provide excellent electron confinement for n-type IGZO thin film transistors.