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HARVARD Citation
Zhang, X. et al. (2020). Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors. Journal of nuclear science and technology. 57 (9), pp. 1015-1021. [Online].
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Zhang, X. et al. (2020). Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors. Journal of nuclear science and technology. 57 (9), pp. 1015-1021. [Online].