Research on rapid growth of monolayer graphene by vertical cold-wall CVD method. Issue 1 (1st January 2020)

• Record Type: Journal Article
• Authors: Xu, Kun; Duan, Xiangyang; Li, Yan; Du, Yinxiao; Yang, Peng; Chen, Leiming; Zeng, Fanguang
• Is Part Of: Journal of experimental nanoscience. Volume 15:Issue 1(2020)
• Page Start: 417
• Page End: 426
• Publication Date: 2020-01-01
• Subjects: Graphene -- CVD -- rapid growth -- vertical cold-wall; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanomedicine -- Periodicals; Nanotechnology -- Periodicals; 620.5
• DOI: 10.1080/17458080.2020.1818722
• Languages: English
• ISSNs: 1745-8080

Abstract

Abstract: Chemical vapor deposition (CVD) is one of the most important methods for the preparation of graphene. Graphene is usually prepared using horizontal tube CVD (HT-CVD) method. However, the preparation of this method is too long, generally more than 2 h. In this article, a method called vertical cold-wall CVD (VCW-CVD) method was introduced for graphene preparation. Due to the vertical angle between direction of gas flow and sample surface, the reaction process of this method for graphene preparation is only 1 min. Accordingly, in this article, the modified parameter of graphene preparation by this method was discussed. Besides, the VCW-CVD graphene had an equal quality with the HT-CVD graphene, which was proved by measurement of conductivity, transmittance and heat stability.