Cite
HARVARD Citation
Li, Z. et al. (2020). A 0.3–6 GHz noise and distortion cancelling LNA achieving an NF of 2.8±0.3 dB in 0.18-μm SiGe BiCMOS process. Microelectronics journal. p. . [Online].
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Li, Z. et al. (2020). A 0.3–6 GHz noise and distortion cancelling LNA achieving an NF of 2.8±0.3 dB in 0.18-μm SiGe BiCMOS process. Microelectronics journal. p. . [Online].