On the design of p-channel step-FinFET at sub-10nm node: A parametric analysis. (August 2022)

• Record Type: Journal Article
• Authors: Padhi, Santosh Kumar; Narendar, Vadthiya; Nishad, Atul Kumar
• Is Part Of: Microelectronics journal. Volume 126(2022)
• Publication Date: 2022-08
• Subjects: c-FinFET -- drain Induced Barrier Lowering (DIBL) -- fin height -- Subthreshold Swing (SS) -- step-FinFET -- transconductance (gm) -- transconductance generation factor (TGF) -- Vt roll-off; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2022.105505
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This paper presents a three dimensional (3-D) statistical simulation study of a 7 nm technology node SOI p-channel step-FinFET and compares with that of a conventional FinFET (c-FinFET). For the first time we have investigated the impact of various dimensional parameters like Gate Length ( L G ), Fin width ( W fin1 and W fin2, W fin = fixed ), Fin height ( H fin1 and H fin2, H fin = fixed) and Fin-width ratio on the performance of c-FinFET and step-FinFET devices. These FinFET structures have been designed and simulated in Cogenda Visual TCAD under certain boundary conditions and the performance has been analyzed. The electrical parameters such as ON-current ( I ON ), OFF-current ( I OFF ), Sub-threshold Swing ( SS ), Drain Induced Barrier Lowering ( DIBL ), threshold voltage (Vt ) roll-off, Transconductance ( g m ) and Transconductance Generation Factor ( TGF ) are extracted. It is observed that short channel effects (SCEs) can be controlled by reducing W fin1, decreasing major fin height ( H fin1 ) and increasing Gate length ( L G ) (14 nm to 20 nm). It is noticed that there is a significant improvement in ION /IOFF ratio from 1.01 × 10 4 to 1.41 × 10 5 with respect to increased channel length, SS of 76.68 mV/decade to 67.8 mV/decade and excellent DIBL of 55 mV/V in c-FinFET. For the proposed step-FinFET at LG = 16 nm there is improved DIBL of 85 mV/V compared to the c-FinFET, which can be further improved up to 64.63 mV/V by decreasing the H fin1 / H fin2 ratio (4 to 0.25). The parametric analysis concludes that step-FinFET is more susceptible to SCEs in terms of DIBL, Vt roll-off as compared to the c-FinFET. This work considers LG = 16 nm for analysing the dimensional variation effect on both the devices. In contrast c-FinFET is more preferable than the proposed device at lower technology nodes.