Optoelectronic Functionality of BiFeO3–SrTiO3 Interface. (22nd October 2021)

• Record Type: Journal Article
• Authors: Zhang, Hang‐Bo; Alexe, Marin
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 6(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-22
• Subjects: bismuth ferrites -- interfaces -- oxygen vacancies -- strontium titanates; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202100665
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: One effective way to extend the functional degree of freedom for semiconductors is to introduce structural defects (e.g., surface or interface) and chemical defects as they commonly exist and modify the properties of the entity. Here, the optoelectronic properties of bismuth ferrite thin films and their tuning by the interface between the film and the strontium titanate substrate are reported. The defects that have been demonstrated, especially oxygen vacancies, are of paramount importance in the photoelectric properties of a film‐substrate system. A detailed analysis of the oxygen vacancy levels supports the role of the interface in carrier transport. These results provide a new strategy to design the optoelectronic device via usual defect doping and interface coupling. Abstract : Here, a study on the interface effect on the optoelectronic property of single crystal monodomain BiFeO3 thin film on SrTiO3 is presented. It reveals the important role played by the substrate‐film interface in the electronic transport as well as its tuning by oxygen vacancy doping. This opens up new opportunities to expand the overall functionalities through interfacial coupling.