Influence of Elements on the Corrosion Resistance of DLC Films. (20th June 2017)

• Record Type: Journal Article
• Authors: Moolsradoo, Nutthanun; Watanabe, Shuichi
• Other Names: De Bonis Angela Academic Editor.
• Is Part Of: Advances in materials science and engineering. Volume 2017(2017)
• Publication Date: 2017-06-20
• Subjects: Materials science -- Periodicals; Materials science; Periodicals; 620.11
• DOI: 10.1155/2017/3571454
• Languages: English
• ISSNs: 1687-8434

Abstract

Abstract : Pure DLC, Si-DLC, and Si-N-DLC films deposited from C2 H2, C2 H2 : TMS and C2 H2 : TMS : N2 mixtures were used to study the effects of the elemental contents (silicon, silicon-nitrogen) on deposition and corrosion resistance properties. The films were prepared on Si (100) wafers using the plasma-based ion implantation (PBII) technique. The film structure was analyzed using Raman spectroscopy. The composition at the top surface of the films was measured using energy dispersive X-ray spectroscopy (EDS). The hardness and elastic modulus of the films were measured using a nanoindentation hardness tester. The corrosion performance of the films was conducted using potentiodynamic polarization experiments in an aqueous 0.05 M NaCl solution. The results indicate that the hardness and corrosion resistance of the Si-DLC film increase as the silicon content increases. This is due to the increase of the sp 3 cluster. The corrosion resistance of a pure DLC film increases when silicon and silicon-nitrogen are doped into the film. Si-DLC films with a silicon content of 40 at.% had a corrosion potential value of 0.61 V, while a Si-N-DLC film with a silicon and nitrogen content of 19.3 at.% and 1 at.% shows a corrosion potential value of 0.85 V, which is a considerable improvement in the corrosion resistance property.