Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells. (29th August 2012)

• Record Type: Journal Article
• Authors: Yang, Kai; Ichimura, Masaya
• Other Names: Bhattacharya Raghu N. Academic Editor.
• Is Part Of: International journal of photoenergy. Volume 2012(2012)
• Publication Date: 2012-08-29
• Subjects: Photochemistry -- Periodicals; Photobiology -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Photochimie; Photobiologie; Chimie physique et théorique; Chemistry, Physical and theoretical; Photobiology; Photochemistry; Electronic journals; Periodicals; 541.35
• DOI: 10.1155/2012/154704
• Languages: English
• ISSNs: 1110-662X

Abstract

Abstract : A new multinary semiconductor Cu2 ZnSnS 4 − x O x (CZTSO), which does not contain toxic elements and expensive rare metals, was fabricated by the electrochemical deposition (ECD) method. CZTSO thin films were deposited onto indium tin oxide (ITO-) coated glass substrates by DC and two-step pulsed ECD from aqueous solutions containing CuSO4, ZnSO4, SnSO4, and Na2 S2 O3 . The films deposited by pulsed ECD contained smaller amount of oxygen than those deposited by DC ECD. The films had band gap energies in a range from 1.5 eV and 2.1 eV. By a photoelectrochemical measurement, it was confirmed that CZTSO films showed p-type conduction and photosensitivity. CZTSO/ZnO heterojunctions exhibited rectification properties in a current-voltage measurement.