Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout. (17th November 2014)

• Record Type: Journal Article
• Authors: Lee, Min Su; Lee, Hee Chul
• Other Names: Biondi-Zoccai Giuseppe Academic Editor.
• Is Part Of: ISRN obstetrics and gynecology. Volume 2014(2014)
• Publication Date: 2014-11-17
• Subjects: Obstetrics -- Periodicals; Gynecology -- Periodicals; Pregnancy Complications; Genital Diseases, Female; Gynecology; Obstetrics; Electronic journals; Periodical; Periodicals; Fulltext; Internet Resources; Periodicals; 618.2
• DOI: 10.1155/2014/145759
• Languages: English
• ISSNs: 2090-4436

Abstract

Abstract : In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the edge of the source and drain, which affects its aspect ratio. In order to increase its practical use, a new aspect ratio model is proposed for the DGA n-MOSFET and this model is evaluated through three-dimensional simulations and measurements of the fabricated devices. The proposed aspect ratio model for the DGA n-MOSFET exhibits good agreement with the simulation and measurement results.