Reduced Stochastic Resistive Switching in Organic‐Inorganic Hybrid Memristors by Vapor‐Phase Infiltration (Adv. Electron. Mater. 7/2022). (19th July 2022)

• Record Type: Journal Article
• Authors: Subramanian, Ashwanth; Tiwale, Nikhil; Kisslinger, Kim; Nam, Chang‐Yong
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 7(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-07-19
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202270035
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Organic‐Inorganic Hybrid Resistive Random‐Access Memory In article number 2200172, Ashwanth Subramanian, Chang‐Yong Nam, and co‐workers develop a new organic‐inorganic hybrid resistive switching medium for memristor applications by using vaporphase infiltration, an ex‐situ inorganic hybridization method derived from atomic layer deposition. The hybridization not only enables control over switching parameters but also reduces their stochastic variability. By controlling compliance current, multi‐state analog switching is demonstrated for potential neuromorphic computing.