Unravelling the Role of Electron Acceptors for the Universal Enhancement of Charge Transport in Quinoid‐Donor‐Acceptor Polymers for High‐Performance Transistors. (15th May 2022)
- Record Type:
- Journal Article
- Title:
- Unravelling the Role of Electron Acceptors for the Universal Enhancement of Charge Transport in Quinoid‐Donor‐Acceptor Polymers for High‐Performance Transistors. (15th May 2022)
- Main Title:
- Unravelling the Role of Electron Acceptors for the Universal Enhancement of Charge Transport in Quinoid‐Donor‐Acceptor Polymers for High‐Performance Transistors
- Authors:
- Liang, Huanhuan
Liu, Cheng
Zhang, Zesheng
Liu, Xuncheng
Zhou, Quanfeng
Zheng, Guohui
Gong, Xiu
Xie, Lan
Yang, Chen
Zhang, Lianjie
He, Bo
Chen, Junwu
Liu, Yi - Abstract:
- Abstract: The quinoid‐donor‐acceptor (Q‐D‐A) strategy has recently emerged as a promising approach for constructing high mobility semiconducting polymers. In order to fully explore the potential of this strategy in improving the charge transport and elucidating the structure‐property‐performance relationships in Q‐D‐A polymers, a series of new polymers with different electron acceptor units and backbone coplanarity have been synthesized and characterized. All of the resulting Q‐D‐A polymers exhibit much more planar backbone conformations in comparison to their donor‐acceptor (D‐A) counterparts. Moreover, organic field‐effect transistors based on Q‐D‐A polymers exhibit excellent effective hole mobilities in a range of 0.44 to 3.35 cm 2 V −1 s −1, most of which are orders of magnitude higher than those of their corresponding D‐A polymers. Notably, the hole mobility of 3.35 cm 2 V −1 s −1 is among the highest for the quinoidal‐aromatic polymers characterized by conventional spin‐coating methods. Furthermore, the role of electron acceptors in Q‐D‐A polymers has been comprehensively investigated. Polymers with stronger acceptor units are more inclined to deliver edge‐on lamellas, high film crystallinity, small effective hole masses, and decent operational stability. The detailed structure‐property‐device performance relationship will pave the way toward high performance semiconducting polymers using the potent Q‐D‐A strategy. Abstract : The potential of underexploredAbstract: The quinoid‐donor‐acceptor (Q‐D‐A) strategy has recently emerged as a promising approach for constructing high mobility semiconducting polymers. In order to fully explore the potential of this strategy in improving the charge transport and elucidating the structure‐property‐performance relationships in Q‐D‐A polymers, a series of new polymers with different electron acceptor units and backbone coplanarity have been synthesized and characterized. All of the resulting Q‐D‐A polymers exhibit much more planar backbone conformations in comparison to their donor‐acceptor (D‐A) counterparts. Moreover, organic field‐effect transistors based on Q‐D‐A polymers exhibit excellent effective hole mobilities in a range of 0.44 to 3.35 cm 2 V −1 s −1, most of which are orders of magnitude higher than those of their corresponding D‐A polymers. Notably, the hole mobility of 3.35 cm 2 V −1 s −1 is among the highest for the quinoidal‐aromatic polymers characterized by conventional spin‐coating methods. Furthermore, the role of electron acceptors in Q‐D‐A polymers has been comprehensively investigated. Polymers with stronger acceptor units are more inclined to deliver edge‐on lamellas, high film crystallinity, small effective hole masses, and decent operational stability. The detailed structure‐property‐device performance relationship will pave the way toward high performance semiconducting polymers using the potent Q‐D‐A strategy. Abstract : The potential of underexplored quinoid‐donor‐acceptor strategy for developing practical semiconducting polymers and the role of electron acceptors are comprehensively investigated, leading to high‐performance transistors with higher mobilities and robust storage and operational stabilities. Polymers with stronger acceptor units tend to deliver edge‐on lamellas, high film crystallinity, small effective hole masses, and decent operational stability. … (more)
- Is Part Of:
- Advanced functional materials. Volume 32:Number 30(2022)
- Journal:
- Advanced functional materials
- Issue:
- Volume 32:Number 30(2022)
- Issue Display:
- Volume 32, Issue 30 (2022)
- Year:
- 2022
- Volume:
- 32
- Issue:
- 30
- Issue Sort Value:
- 2022-0032-0030-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2022-05-15
- Subjects:
- charge transport -- electron acceptors -- morphologies -- organic field‐effect transistors -- quinoid‐donor‐acceptor strategies
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202201903 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 22607.xml