Review of electrical stimulus methods of in situ transmission electron microscope to study resistive random access memory. Issue 27 (28th June 2022)

• Record Type: Journal Article
• Authors: Zhang, Yewei; Wang, Chaolun; Wu, Xing
• Is Part Of: Nanoscale. Volume 14:Issue 27(2022)
• Page Start: 9542
• Page End: 9552
• Publication Date: 2022-06-28
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d2nr01872a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : This review introduces the in situ electrical transmission electron microscope technologies that apply various electrical stimuli to resistive random access memory (RRAM) devices exploring the microscopic process of RRAM in different working modes. Abstract : Resistive random access memory (RRAM) devices have been demonstrated to be a promising solution for the implementation of a neuromorphic system with high-density synapses due to the simple device structure, nanoscale dimension, high switching speed, and low power consumption. Various electrical stimuli applied to RRAM devices could cause various working modes of the bionic synapses. The application of RRAM devices needs to understand the micromechanism of the resistive switching process, which is inseparable from advanced characterization techniques. In situ transmission electron microscopy (TEM) with high-resolution imaging and versatile external fields plays an important role in the static characterization and dynamic manipulation of nanoscale devices. Focused on in situ TEM techniques, this review article introduces in situ TEM setups and the corresponding sample fabrication process for RRAM research. Then, the electrical stimulating methodologies including pulse and direct current voltage applied to RRAM are introduced, followed by the summary of electron holography to characterize the electrical potential distribution. By applying various electrical stimuli to the RRAM samples, the working mode of bionic synapses could be changed according to the requirement. Finally, the outlook of the RRAM study with in situ TEM is proposed. This review demonstrates the electrical stimulus capability of in situ TEM to understand the physical mechanism of various types of RRAM devices.