Cite
HARVARD Citation
Watanabe, N. et al. (2022). Thin-drift-layer n-channel 4H-SiC IGBT with low switching loss and switching ringing reduction. Japanese journal of applied physics. p. . [Online].
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Watanabe, N. et al. (2022). Thin-drift-layer n-channel 4H-SiC IGBT with low switching loss and switching ringing reduction. Japanese journal of applied physics. p. . [Online].