Optimization of sulphurization temperature for the production of single-phase CZTS kesterite layers synthesized by electrodeposition. (1st September 2020)

• Record Type: Journal Article
• Authors: Boudaira, R.; Meglali, O.; Bouraiou, A.; Attaf, N.; Sedrati, C.; Aida, M.S.
• Is Part Of: Surface engineering. Volume 36:Number 9(2020)
• Page Start: 1000
• Page End: 1011
• Publication Date: 2020-09-01
• Subjects: Thin film -- electrodeposition -- CZTS -- sulphurization; Surfaces (Technology) -- Periodicals; Coatings -- Periodicals; 620.4405
• DOI: 10.1080/02670844.2020.1758013
• Languages: English
• ISSNs: 0267-0844

Abstract

ABSTRACT: Cu2 ZnSnS4 films were grown onto FTO/glass substrate by electrodeposition. The influence of sulphurization temperature on CZTS properties was examined using XRD, Raman spectroscopy, SEM, optical transmittance and electrical resistivity measurements. The film sulphurized at 400°C exhibited CuS as the major phase mixed with CZTS and SnS2 phases. However, the films sulphurized at 450 and 500°C are mainly composed of the CZTS kesterite phase with SnS2 and CuS as secondary phases. Further sulphurization temperature increase up to 550°C led to the complete disappearance of CuS and SnS2 phases and the obtained film is a pure CZTS kesterite mono-phase. The Raman spectra exhibit a line centred at 334 cm −1 ; it is the most intense recorded in the spectra of the films sulphurized at 500 and 550°C. The film sulphurized at 550 °C, had an ideal band gap of 1.40 eV and electrical resistivity of (41.4 ± 5.5) Ω cm.