Optimizing Annealing Process for Ferroelectric Y‐Doped HfO2 Thin Films by All‐Inorganic Aqueous Precursor Solution. (6th January 2021)

• Record Type: Journal Article
• Authors: Wang, Jingjing; Zhou, Dayu; Dong, Wei; Yao, Yifan; Sun, Nana; Ali, Faizan; Hou, Xiaoduo; Liu, Feng
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 2(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-01-06
• Subjects: annealing -- chemical solution deposition -- ferroelectrics -- HfO 2 -- thin films; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202000585
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: 10 nm thick yttrium doped HfO2 (Y:HfO2 ) thin films are prepared on Si (100) substrates by the chemical solution deposition method using all‐inorganic aqueous salt precursors. The influence of the annealing process, consisting of annealing temperature, holding time, and heating rate, on the crystalline structure and ferroelectric properties of thin films is investigated. Results show that the crystalline structure and ferroelectric properties of films exhibit a strong annealing process dependence. The monoclinic phase and asymmetric orthorhombic phase coexist in the films. The annealing process of the best ferroelectric behavior is obtained by using annealing temperature at 700 °C for 30 s with a heating rate of 30 °C s −1 in N2 atmosphere. The film exhibits lowest m‐phase fraction of 17.9%, accompanied with the highest remanent polarization of 21.4 µC cm −2 . Abstract : 10 nm thick Y:HfO2 thin films are prepared on Si (100) substrates using all‐inorganic aqueous salt precursors, and the effect of process on film properties is investigated systematically. The highest remanent polarization of 21.4 µC cm −2 is obtained by annealing at 700 °C for 30 s with a heating rate of 30 °C s −1 in N2 atmosphere.