Analysis of Surface Microstructures Formed on Ir Substrate under Different Bias Conditions by Microwave Plasma Chemical Vapor Deposition. Issue 13 (5th May 2022)

• Record Type: Journal Article
• Authors: Wang, Weihua; Yang, Shilin; Shu, Guoyang; Liu, Benjian; Han, Jiecai; Dai, Bing; Zhu, Jiaqi
• Is Part Of: Physica status solidi. Volume 219:Issue 13(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-05-05
• Subjects: bias voltage -- Ir3Si compound -- iridium -- surface modification -- transmission electron microscopy; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100810
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : To understand the process window of bias‐enhanced nucleation of diamond, it is important to study surface modifications of Ir substrates that occur under different conditions. Herein, various microstructures formed on Ir substrates are reported. The first microstructure contains rectangular particles with a size of several hundred nanometers obtained at a relatively high pressure of 12.5 kPa and a high temperature of 880 °C; these particles consist of epitaxially grown Ir3 Si species. The second microstructure includes particles oriented along the [110] direction; these particles, however, consist of etched Ir pillars with a height of 400 nm when the substrate temperature increases to 1110 °C. Both microstructures form because of Ir sputtering due to the bombardment of energetic charged ions and the transport of Ir surface atoms. This study demonstrates two types of surface modifications under different bias‐enhanced nucleation conditions and provides a method for preparing an epitaxial Ir–Si compound that can be applied in various silicon‐based electronic devices. Abstract : Two novel microstructures of epitaxial Ir3 Si particles and preferentially aligned surface structures form on Ir substrates under nonstandard bias‐enhanced nucleation (BEN) conditions (a reactor pressure of 12.5 kPa and a substrate temperature of 880 or 1110 °C). The mechanism underlying the surface modification and diamond epitaxial nucleation is further clarified based on ion bombardment and surface atom diffusion.