Cite
HARVARD Citation
Kumabe, T. et al. (2021). Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese journal of applied physics. p. . [Online].
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Kumabe, T. et al. (2021). Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese journal of applied physics. p. . [Online].