AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency. (15th January 2021)

• Record Type: Journal Article
• Authors: Morita, Iori; Ishikawa, Fumitaro; Honda, Anna; Sato, Daiki; Koizumi, Atsushi; Nishitani, Tomohiro; Tabuchi, Masao
• Is Part Of: Japanese journal of applied physics. Volume 60:Number SB(2021)
• Publication Date: 2021-01-15
• Subjects: GaAs -- AlGaAs -- Photocathode -- Superlattice -- Molecular beam epitaxy; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abd6e0
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The semiconductor photocathode with AlGaAs/GaAs superlattice structures, which is a highly durable electron beam source with low energy dispersion, were grown by molecular beam epitaxy. The sample showed a step-like quantum efficiency spectrum of photoelectron emission, indicating its applicability to photocathodes. The optimization of room temperature photoluminescence provides the improvement of the photocathode quantum efficiency up to 0.5%, promising for its further improvement and realistic applications.