Cite
HARVARD Citation
Ohta, H. et al. (2021). Breakdown phenomenon dependences on the number and positions of threading dislocations in vertical p-n junction GaN diodes. Japanese journal of applied physics. p. . [Online].
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Ohta, H. et al. (2021). Breakdown phenomenon dependences on the number and positions of threading dislocations in vertical p-n junction GaN diodes. Japanese journal of applied physics. p. . [Online].