Cite
HARVARD Citation
Matsumura, M. et al. (2022). Experimental study on shallow and deep dopant properties at the interface of PtOx/ZnO Schottky diodes. Japanese journal of applied physics. p. . [Online].
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Matsumura, M. et al. (2022). Experimental study on shallow and deep dopant properties at the interface of PtOx/ZnO Schottky diodes. Japanese journal of applied physics. p. . [Online].