Cite
HARVARD Citation
Mo, F. et al. (2022). A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures. Japanese journal of applied physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Mo, F. et al. (2022). A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures. Japanese journal of applied physics. p. . [Online].