Cite
HARVARD Citation
Wada, R. et al. (2022). The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles. Japanese journal of applied physics. p. . [Online].
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Wada, R. et al. (2022). The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles. Japanese journal of applied physics. p. . [Online].