Analysis of the IGBT Module with Bonding Wire Failure Based on Transient Thermal Impedance. Issue 1 (1st May 2022)

• Record Type: Journal Article
• Authors: Gao, Jing; Lv, Zhirui; Lu, Yi; Song, Peng; Zhao, Yuan; Xu, Guangda; Yang, Minxiang
• Is Part Of: Journal of physics. Volume 2276:Issue 1(2022)
• Publication Date: 2022-05-01
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/2276/1/012033
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Insulated gate bipolar transistor(IGBT) modules are widely used in inverters as power switching devices. In actual working conditions, the failure of bonding wires is one of the most common failure modes. In the current device reliability evaluation, the influence of bonding wire failure is ignored, which may easily cause the subsequent evaluation results to deviate from the reality. In this paper, the influence of the gradual failure of the bonding wire on the transient thermal impedance of the device is explored, and the electro-thermal coupling model of the device is constructed. The simulation results show that the transient thermal impedance of the device increases with the gradual failure of the bonding wire. An experimental platform for transient thermal resistance measurement was built to verify the accuracy of the simulation results.