Effect of strain on electronic structure of AA stacked GeSe bilayer. (2020)

• Record Type: Journal Article
• Authors: Nag, Shagun; Saini, Anuradha; Singh, Ranber; Kumar, Ranjan
• Is Part Of: Materials today. Volume 28:Part 3(2020)
• Page Start: 1853
• Page End: 1857
• Publication Date: 2020
• Subjects: Two-dimensional materials -- Density-functional theory -- Electronic Structure -- Uniaxial Strain -- Band gap; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2020.05.291
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: The electronic structure of the AA stacked GeSe bilayer is investigated using the density functional theory (DFT) calculations. Bilayer is an indirect band gap semiconductor having band gap equal to 1.05 eV. This indirect band gap can be further tuned via in-plane strain along zigzag and armchair direction. Further, there is an indirect-to-direct band gap transition at tensile strain of 2% along the zigzag direction.