Device and Circuit Level Assessment of Negative Capacitance TFETs for Low-Power High-Performance Digital Circuits. (1st May 2022)

• Record Type: Journal Article
• Authors: Shoaib, Mohammad; Intekhab Amin, S.; Kumar, Naveen; Anand, Sunny; Chunn, Ankush; Alam, M. Shah
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 5(2022)
• Publication Date: 2022-05-01
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac6d76
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper, we propose and analyse the performance of negative capacitance tunnel field-effect-transistors (NC-TFETs) at device and circuit level. We design and simulate four NC-TFETs, two are Silicon based "Si NC N-TFET, " "Si NC P-TFET" and two are Heterojunction Silicon-Germanium source based "SiGe NC N-TFET, " "SiGe NC P-TFET." The effect of NC is incorporated with 5 nm thick layer of ferroelectric Hafnium Zirconium Oxide HfZrO2 (FE-HZO) in gate stack of TFETs by using of Landau-Khalatnikov (L-K) equations in MATLAB. The results show that at reduced NC gate voltage, the ON current (ION ), On to OFF current (ION /IOFF ) in NC devices is enhanced by ∼ 100 %, while ∼ 50 % reduction in the threshold voltage (VTH ) and Average subthreshold slope (SSAV ) is observed. The SiGe NC-TFETs showed the best response with maximum ION ∼ 10 − 5 A μ m range, ION /IOFF ratio of ∼ 10 11, lowest SS ∼ 25 mv decade − 1, as compare to Si NC-TFETs. The circuit transient analysis is done using the Verilog-A model based on look-up table (LUT) approach. The propagation delay of NC NAND circuits is reduced ∼ 90%, the SiGe NC-TFETs based circuits showing the smallest propagation delay and fast transient characteristics. This paper also demonstrates that the impact of FE-HZO thickness (TFE ) on the device-circuit characteristics.