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HARVARD Citation
Lin, H. et al. (2022). Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM). Applied physics express. p. . [Online].
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Lin, H. et al. (2022). Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM). Applied physics express. p. . [Online].