Raman study of photoinduced changes in Cd-doped amorphous GeSe2 films. (2022)

• Record Type: Journal Article
• Authors: Azhniuk, Yuriy M.; Gomonnai, Alexander V.; Kryshenik, Volodymyr M.; Lopushansky, Vasyl V.; Loya, Vasyl Y.; Voynarovych, Ivan M.; Zahn, Dietrich R.T.
• Is Part Of: Materials today. Volume 62:Part 9(2022)
• Page Start: 5759
• Page End: 5762
• Publication Date: 2022
• Subjects: Amorphous chalcogenides -- Thin films -- Raman spectroscopy -- II–VI nanocrystals; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2022.02.653
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: For Cd-doped amorphous GeSe2 films Raman spectra reveal a considerable decrease of the amount of edge-sharing GeSe4 tetrahedra and an increasing number of ethane-like Se3 Ge–GeSe3 structural units compared to the undoped films. A Raman peak with a frequency close to that of the CdSe LO phonon observed for the Cd-doped films at increasing laser power density ( P exc ≥ 100 kW/cm 2 ) provides evidence for the photoinduced formation of CdSe nanoparticles in the GeSe2 :Cd films due to photoenhanced diffusion.