Atomic layer deposition of AlN on different SiC surfaces. Issue 1 (1st March 2022)

• Record Type: Journal Article
• Authors: Beshkova, M; Deminskyi, P; Hsu, C-W; Shtepliuk, I; Avramova, I; Yakimova, R; Pedersen, H
• Is Part Of: Journal of physics. Volume 2240:Issue 1(2022)
• Publication Date: 2022-03-01
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/2240/1/012004
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Thin AlN films were grown using a Picosun R-200 atomic layer deposition (ALD) reactor on SiC surfaces with different crystallographic orientation: on-axis 4H-SiC (0001) and 8° off-axis 4H-SiC. TMA (trimethylaluminium) and NH3 were used as precursors while hydrogen and nitrogen plasma were applied for in-situ substrate cleaning. The substrate temperatures were 400 °C and 450 °C, with 20 ALD cycles. The surface morphology was investigated by scanning electron microscopy (SEM), which revealed nanometer-sized islands in all films. The AlN films deposited on on-axis 4H-SiC at 450 °C substrate temperature exhibited a relatively small roughness of about 0.255 nm. The chemical composition and bonding states were investigated by X-ray photoelectron spectroscopy. For all layers, high-resolution XPS showed Al 2p and N 1s spectra that are characteristic of AlN. These results are a good prerequisite of establishing the growth conditions of AlN films for surface acoustic wave (SAW) devices.