Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor. (March 2022)

• Record Type: Journal Article
• Authors: Filatov, D.O.; Koryazhkina, M.N.; Novikov, A.S.; Shishmakova, V.A.; Shenina, M.E.; Antonov, I.N.; Gorshkov, O.N.; Agudov, N.V.; Carollo, A.; Valenti, D.; Spagnolo, B.
• Is Part Of: Chaos, solitons and fractals. Volume 156(2022)
• Publication Date: 2022-03
• Subjects: Resistive switching -- Memristor -- Yttria stabilized zirconia -- Metastability -- Noise induced stabilization -- Beneficiary role of noise; Chaotic behavior in systems -- Periodicals; Solitons -- Periodicals; Fractals -- Periodicals; Chaotic behavior in systems; Fractals; Solitons; Periodicals; 003.7
• DOI: 10.1016/j.chaos.2022.111810
• Languages: English
• ISSNs: 0960-0779

Abstract

Abstract: The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.