High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga2O3/ZnO heterojunction. (15th September 2022)

• Record Type: Journal Article
• Authors: Zhang, Maolin; Liu, Zeng; Yang, Lili; Yao, Jiafei; Chen, Jing; Zhang, Jun; Wei, Wei; Guo, Yufeng; Tang, Weihua
• Is Part Of: Journal of physics. Volume 55:Number 37(2022)
• Publication Date: 2022-09-15
• Subjects: ϵ-Ga2O3 -- photodetector -- heterojunction -- ZnO -- temperature dependence; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac7d1c
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Ga2 O3 -based photodetectors are promising for deep ultraviolet (DUV) detection owing to the relatively large bandgap (>4.5 eV) of Ga2 O3 . High-temperature applications, such as flame detection and aerospace have been a major challenge to the reliability of electronic devices including photodetectors. All-oxide electronic devices have great potential for applications that require high thermal stability. Therefore, we constructed an all-oxide self-powered DUV photodetector based on ϵ -Ga2 O3 /ZnO heterojunction and examined its ruggedness in a high-temperature environment up to 600 K. A photocurrent of up to 0.3 μ A and a photo-to-dark current ratio of ∼8000 were observed at room temperature. In addition, the ϵ -Ga2 O3 /ZnO heterojunction remained functional even at an ambient temperature of 600 K. It was also found that sensing performance including photo-to-dark current ratio (PDCR), responsivity, detectivity, and external quantum efficiency degraded as the temperature increased. Detailed generation/recombination processes, as well as carrier transport, were explored to reveal physical insights. The thermal stability of the ϵ -Ga2 O3 /ZnO photodetector is thus examined, which would provide the basis for further development.