Design and implementation of static 2:1 frequency divider based on GaAs pHEMT. Issue 9 (9th May 2022)

• Record Type: Journal Article
• Authors: Zhao, Ranran; Zhang, Yuming; Lu, Hongliang; Wu, Yue
• Is Part Of: Microwave and optical technology letters. Volume 64:Issue 9(2022)
• Page Start: 1495
• Page End: 1499
• Publication Date: 2022-05-09
• Subjects: GaAs pHEMT -- source coupled logic structure -- static frequency divider; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.33299
• Languages: English
• ISSNs: 0895-2477

Abstract

Abstract: This study presents a low phase noise static 2:1 frequency divider in a 0.15 µm gallium arsenide pseudomorphic high electron mobility transisitor process. The proposed divider is based on an improved source coupled logic structure. The maximum bandwidth utilization of the frequency divider is improved up to 100% through theoretical analysis. This frequency divider with low phase noise achieves an operating frequency of direct current ~4.8 GHz for 0 dBm input, and the phase noise is −131.06 dBc/Hz@10 MHz. The chip area is 0.624 × 0.923 mm.